ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,775, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Source/drains in semiconductor devi... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,776, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nanosheet epitaxy with full bottom isolation... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,777, issued on April 7, was assigned to Intel Corp. (Santa Clara, Calif.). "Low temperature, high germanium, high boron SiGe:B pEPI with ti... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,778, issued on April 7, was assigned to INSTITUTE OF MICROELECTRONICS. CHINESE ACADEMY OF SCIENCES (Beijing). "Semiconductor device, method... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,779, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFCATURING Co. LTD. (Hsinchu, Taiwan). "Gate-all-around device with protect... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,780, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Gate-all-around transistors with hybrid orie... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,781, issued on April 7, was assigned to GE AVIATION SYSTEMS LLC (Grand Rapids, Mich.). "Semiconductor switching device" was invented by Col... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,782, issued on April 7, was assigned to IceMOS Technology Ltd. (Great Britain). "Super-junction MOSFET/IGBT with MEMS layer transfer and WB... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,783, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Reducing parasitic capacitance in s... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,784, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device having doped g... Read More